http://snf.stanford.edu/Process/WetProcessing/WetER1.html
On Thu, Oct 18, 2012 at 4:30 PM, Kyunglok Kim <kyunglok@stanford.edu> wrote:
Dear labmembers,
I'd like to use 6:1 BOE to etch a 1um thick LTO deposited at 400degC.
If 6:1 BOE etch rate is too aggressive, I also have a plan to use 50:1 HF instead of it.
Would you please let me know the average etch rate of both of them?
I really appreciate your help!
Best,
Kyunglok Kim
PhD Candidate
Electrical Engineering
Stanford University
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