Re: Good results with HD_SiO2

The nominal chuck temperature is 90C, wafer believed less than 100C.

The wafer is RF Biased to give some ion bombardment during deposition.

jim

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From: Sebastian J. Osterfeld <sebastian.j.osterfeld@magarray.com>
To: jim kruger <jimkruger@yahoo.com>
Cc: Douglas Tham <tham@siliciumenergy.com>; HD-pcvd@SNF.stanford.edu; labmembers@snf.stanford.edu
Sent: Friday, December 7, 2012 7:10 PM
Subject: Re: Good results with HD_SiO2

Hi Jim,

What is the wafer temperature during the SiO2 deposition?

Thanks!
Sebastian

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From: "jim kruger" <jimkruger@yahoo.com>
To: HD-pcvd@SNF.stanford.edu, labmembers@snf.stanford.edu
Cc: "Douglas Tham" <tham@siliciumenergy.com>
Sent: Friday, December 7, 2012 12:02:26 PM
Subject: Good results with HD_SiO2

Good results for HD_SiO2.

I find that the uniformity and reproducibility of rate and index are all better than 1%

I also find that Nanospec(5 pt) and Woollam(9 pt) averages agree to better than 1%

The key to predicting thickness is adding the 6 seconds of the "Light" step to the total deposition time.

I included data from thickness' 56 nm to 677 nm and from factory and site acceptance as well as depositions logged by "wslee" and my own 3 depositions.

The rate for HD_SiO2 is 27.58 A/sec, +/- 1%. Remember to account for the 6 seconds of strike.

If interested, I can e-mail my spreadsheet.

Please log your results and send me your data for "HD_SiO2". Send dry etch, and especially wet etch rates as well.

Any one interested in a recipe for lower rate for control of thinner films?   I predict (10.3 + 6) seconds for a 450 Ang. film.

jimkruger