Regards, John
-------- Original Message --------
| Subject: | RAITH PASSED ALL QUALIFICATION TEST WITH FLYING COLORS. THE SYSTEM IS IN A PERFECT STATE AFTER THE PM. |
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| Date: | Thu, 10 Jan 2013 17:38:46 -0800 |
| From: | James W. Conway <jwc@snf.stanford.edu> |
| Organization: | Stanford Nanofabrication Facility |
| To: | RAITH 150 <raith@snf.stanford.edu>, Lev Markov <lm@raithusa.com>, Jason Sanabia <js@raithusa.com>, "Kevin Burcham -- RAITH USA Inc." <kb@raithusa.com>, Rich Tiberio <tiberio@stanford.edu>, John Bumgarner SNF Operations Director <jwb2005@stanford.edu>, "Mirwais Aktary PhD." <ma@raithusa.com>, Cole Loomis <cl@raithusa.com>, beamtools@snf.stanford.edu |
| CC: | Tomoko Borsa Ph.D CNL Boulder, Co <Tomoko.Borsa@colorado.edu>, Roger T. Howe <rthowe@stanford.edu>, Prof. H.S. Philip Wong <hspwong@stanford.edu>, Jelena Vuckovic -- Stanford <jela@stanford.edu>, Jim Harris - COACH <HARRIS@SNOWMASS.STANFORD.EDU>, Mark L Brongersma - Assoc Prof. of Mat. Sci. and Eng. <Brongersma@stanford.edu>, Krishna Saraswat -- Nielsen Professor SOE <saraswat@stanford.edu> |
Good Evening Raith Community at Stanford, Today I completed my writing test for qualification of the RAITH 150 system performance for site acceptance. Some measurements are still to be completed after pattern transfer next week. The Raith write last evening and overnight was perfect in every way with no errors encountered in the exposures. At 10 kV, 30 um Aperture, 5 mm Working distance on 100 nm 2% 950K PMMA in Anisole: Ebeam waist measured between 1.78 to 2.1 nm FWHM 50% using a latex sphere. This is twice below specifications for 10 kV. This will likely reduce in size to our normal 0.8 - 1.2 nm beam waist as we run in the FE-Gun tip. The E/O card settings and amplifier alignments on the SEM side of the system were very carefully adjusted by Lev Markov, Raith Field Service expert, and there exist no items outstanding. The Beam Current 10 kV 30 um aperture is ~ 0.2068 nA and well within specification for Beam Current Stability. Plots are pending from Tuesday overnight test. Users can examine the plot which is in Raith150/User/Admin/ 01092013BeamIStab.rag I wrote a long series of test and Process Control Monitor patterns, writing in both stitched and FBMS modes including orthogonality and distortion test across a 1.2 cm sq. area. Careful review of these patterns at 1000x optical Mag on the Vanox microscope displayed not a single stitching error. No breaks or butting errors in any vernier or write field stitched was found. All FBMS patterns exposed perfectly, except for one file that was not converted from my GDSII file properly and likely I made a simple mistake on the editor. I wrote stitched write fields and patterns placed adjacent to each other in separate write fields with not a single stitching break found over a 0.7 by 0.4 cm square area. I wrote 6 plus, 1 mm square zone plates which appear to be perfectly symmetrical in optical contrast. These patterns are very sensitive to field distortions and outside perturbations from RF and magnetic fields which appear as moire fringes that are not uniform across the device. Again each pattern looks perfect. I wrote a large number of the 4x4 simple optical gratings pattern with lines at 265nm by 530 nm pitch around my patterned area and they also look near perfect. (I saw one small area about 50 x 50 um that may have been a particle or small scale contamination in the resist that was written over.) Passed the stitching test. In a quick SEM inspection just completed the smallest isolated line I examine was 7 - 10 nm and Line Edge roughness was < 5 nm. More SEM review and measurements pending after pattern transfer, I am very pleased with this PM and we have a nice new FE-GUN for the year to pursue our research with. Users are requested to be careful and diligent in the use of the tool with regards to properly baking out their resist before loading into the system. (recommend 90 degrees C for 2 minutes on the hotplates) Users are requested to contact me for permission before attempting to write on any materials from outside the lab, or any novel resist system, that may pose a threat of decomposition or out-gassing during the exposure. ----> Users seeking to write above 20 keV ACCELERATION VOLTAGE are requested to check with me to ensure we have sufficient run in time on the FE-Gun to avoid any possibility of EHT trips or arcing transients. This concern is much reduced from PM's in years past as we have excellent vacuum base pressures in the tool after our 200 hour bake-out over the holidays. (Gun vacuum 5.4E-010 Torr, System chamber base is 6.2E-007 Torr one hour after load lock exchange of samples into the system. I look forward to another year of engagement with everyone working in the Ebeam Lab as we push the limits of Ebeam Lithography pursuing your projects at SNF. Users having concerns or needing additional training or process project support need only come to my office hours to get my help. Your work and only the highest quality of results are important to me. If it doesn't come out just perfect in every way please come and see me. Thank you for your support! James Conway Ebeam Technology Group Stanford Nanofabrication Facility
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